smaj5.0 thru smaj188ca vishay general semiconductor document number: 88390 revision: 29-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? 400 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 w above 78 v) ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade base p/nhe3 - rohs co mpliant, high reliability/ automotive grade (aec q101 qualified) terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-directional use c or ca suffix (e.g. smaj10c, smaj10ca). electrical characteristics apply in both directions. primary characteristics v wm 5.0 v to 188 v p ppm 400 w, 300 w i fsm 40 a t j max. 150 c do-214ac (sma) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2. rating is 300 w above 78 v (2) mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 400 w peak pulse current with a waveform (1) i ppm see next table a peak forward surge current 8.3 ms si ngle half sine-wave uni-directional only (2) i fsm 40 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
smaj5.0 thru smaj188ca vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88390 revision: 29-oct-08 2 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max. smaj5.0 ad wd 6.40 7.82 10 5.0 800 41.7 9.6 smaj5.0a (5) ae we 6.40 7.07 10 5.0 800 43.5 9.2 smaj6.0 af wf 6.67 8.15 10 6.0 800 35.1 11.4 smaj6.0a ag wg 6.67 7.37 10 6.0 800 38.8 10.3 smaj6.5 ah wh 7.22 8.82 10 6.5 500 32.5 12.3 smaj6.5a ak wk 7.22 7.98 10 6.5 500 35.7 11.2 smaj7.0 al wl 7.78 9.51 10 7.0 200 30.1 13.3 smaj7.0a am wm 7.78 8.60 10 7.0 200 33.3 12.0 smaj7.5 an wn 8.33 10.2 1.0 7.5 100 28.0 14.3 smaj7.5a ap wp 8.33 9.21 1.0 7.5 100 31.0 12.9 smaj8.0 aq wq 8.89 10.9 1.0 8.0 50 26.7 15.0 smaj8.0a ar wr 8.89 9.83 1.0 8.0 50 29.4 13.6 smaj8.5 as ws 9.44 11.5 1.0 8.5 10 25.2 15.9 smaj8.5a at wt 9.44 10.4 1.0 8.5 10 27.8 14.4 smaj9.0 au wu 10.0 12.2 1.0 9.0 5.0 23.7 16.9 smaj9.0a av wv 10.0 11.1 1.0 9.0 5.0 26.0 15.4 smaj10 aw ww 11.1 13.6 1.0 10 1.0 21.3 18.8 smaj10a ax wx 11.1 12.3 1.0 10 1.0 23.5 17.0 smaj11 ay wy 12.2 14.9 1.0 11 1.0 19.9 20.1 smaj11a az wz 12.2 13.5 1.0 11 1.0 22.0 18.2 smaj12 bd xd 13.3 16.3 1.0 12 1.0 18.2 22.0 smaj12a be xe 13.3 14.7 1.0 12 1.0 20.1 19.9 smaj13 bf xf 14.4 17.6 1.0 13 1.0 16.8 23.8 smaj13a bg xg 14.4 15.9 1.0 13 1.0 18.6 21.5 smaj14 bh xh 15.6 19.1 1.0 14 1.0 15.5 25.8 smaj14a bk xk 15.6 17.2 1.0 14 1.0 17.2 23.2 smaj15 bl xl 16.7 20.4 1.0 15 1.0 14.9 26.9 smaj15a bm xm 16.7 18.5 1.0 15 1.0 16.4 24.4 smaj16 bn xn 17.8 21.8 1.0 16 1.0 13.9 28.8 smaj16a bp xp 17.8 19.7 1.0 16 1.0 15.4 26.0 smaj17 bq xq 18.9 23.1 1.0 17 1.0 13.1 30.5 smaj17a br xr 18.9 20.9 1.0 17 1.0 14.5 27.6 smaj18 bs xs 20.0 24.4 1.0 18 1.0 12.4 32.2 smaj18a bt xt 20.0 22.1 1.0 18 1.0 13.7 29.2 smaj20 bu xu 22.2 27.1 1.0 20 1.0 11.2 35.8 smaj20a bv xv 22.2 24.5 1.0 20 1.0 12.3 32.4 smaj22 bw xw 24.4 29.8 1.0 22 1.0 10.2 39.4 smaj22a bx xx 24.4 26.9 1.0 22 1.0 11.3 35.5 smaj24 by xy 26.7 32.6 1.0 24 1.0 9.3 43.0 smaj24a bz xz 26.7 29.5 1.0 24 1.0 10.3 38.9 smaj26 cd yd 28.9 35.3 1.0 26 1.0 8.6 46.6 smaj26a ce ye 28.9 31.9 1.0 26 1.0 9.5 42.1 smaj28 cf yf 31.1 38.0 1.0 28 1.0 8.0 50.0 smaj28a cg yg 31.1 34.4 1.0 28 1.0 8.8 45.4 smaj30 ch yh 33.3 40.7 1.0 30 1.0 7.5 53.5 smaj30a ck yk 33.3 36.8 1.0 30 1.0 8.3 48.4 smaj33 cl yl 36.7 44.9 1.0 33 1.0 6.8 59.0 smaj33a cm ym 36.7 40.6 1.0 33 1.0 7.5 53.3 smaj36 cn yn 40.0 48.9 1.0 36 1.0 6.2 64.3 smaj36a cp yp 40.0 44.2 1.0 36 1.0 6.9 58.1 smaj40 cq yq 44.4 54.3 1.0 40 1.0 5.6 71.4
smaj5.0 thru smaj188ca vishay general semiconductor document number: 88390 revision: 29-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 notes: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 (5) for the bi-directional smaj5.0ca, the maximum v br is 7.25 v (6) v f = 3.5 v at i f = 25 a (uni-directional only) smaj40a cr yr 44.4 49.1 1.0 40 1.0 6.2 64.5 smaj43 cs ys 47.8 58.4 1.0 43 1.0 5.2 76.7 smaj43a ct yt 47.8 52.8 1.0 43 1.0 5.8 69.4 smaj45 cu yu 50.0 61.1 1.0 45 1.0 5.0 80.3 smaj45a cv yv 50.0 55.3 1.0 45 1.0 5.5 72.7 smaj48 cw yw 53.3 65.1 1.0 48 1.0 4.7 85.5 smaj48a cx yx 53.3 58.9 1.0 48 1.0 5.2 77.4 smaj51 cy yy 56.7 69.3 1.0 51 1.0 4.4 91.1 smaj51a cz yz 56.7 62.7 1.0 51 1.0 4.9 82.4 smaj54 rd zd 60.0 73.3 1.0 54 1.0 4.2 96.3 smaj54a re ze 60.0 66.3 1.0 54 1.0 4.6 87.1 smaj58 rf zf 64.4 78.7 1.0 58 1.0 3.9 103 smaj58a rg zg 64.4 71.2 1.0 58 1.0 4.3 93.6 smaj60 rh zh 66.7 81.5 1.0 60 1.0 3.7 107 smaj60a rk zk 66.7 73.7 1.0 60 1.0 4.1 96.8 smaj64 rl zl 71.1 86.9 1.0 64 1.0 3.5 114 smaj64a rm zm 71.1 78.6 1.0 64 1.0 3.9 103 smaj70 rn zn 77.8 95.1 1.0 70 1.0 3.2 125 smaj70a rp zp 77.8 86.0 1.0 70 1.0 3.5 113 smaj75 rq zq 83.3 102 1.0 75 1.0 3.0 134 smaj75a rr zr 83.3 92.1 1.0 75 1.0 3.3 121 smaj78 rs zs 86.7 106 1.0 78 1.0 2.9 139 smaj78a rt zt 86.7 95.8 1.0 78 1.0 3.2 126 smaj85 ru zu 94.4 115 1.0 85 1.0 2.0 151 smaj85a rv zv 94.4 104 1.0 85 1.0 2.2 137 smaj90 rw zw 100 122 1.0 90 1.0 1.9 160 smaj90a rx zx 100 111 1.0 90 1.0 2.1 146 smaj100 ry zy 111 136 1.0 100 1.0 1.7 179 smaj100a rz zz 111 123 1.0 100 1.0 1.9 162 smaj110 vd vd 122 149 1.0 110 1.0 1.5 196 smaj110a se ve 122 135 1.0 110 1.0 1.7 177 smaj120 sf vf 133 163 1.0 120 1.0 1.4 214 smaj120a vg vg 133 147 1.0 120 1.0 1.6 193 smaj130 sh vh 144 176 1.0 130 1.0 1.3 231 smaj130a vk vk 144 159 1.0 130 1.0 1.4 209 smaj150 sl vl 167 204 1.0 150 1.0 1.1 268 smaj150a vm vm 167 185 1.0 150 1.0 1.2 243 smaj160 sn vn 178 218 1.0 160 1.0 1.0 287 smaj160a sp vp 178 197 1.0 160 1.0 1.2 259 smaj170 sq vq 189 231 1.0 170 1.0 0.99 304 smaj170a sr vr 189 209 1.0 170 1.0 1.09 275 smaj188 st vt 209 255 1.0 188 1.0 0.90 344 smaj188a ss vs 209 231 1.0 188 1.0 0.91 328 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max.
smaj5.0 thru smaj188ca vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88390 revision: 29-oct-08 4 note: (1) mounted on minimum recommended pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient (1) r ja 120 c/w typical thermal resistance, junction to lead r jl 30 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smaj5.0a-e3/61 0.064 61 1800 7" diameter plastic tape and reel smaj5.0a-e3/5a 0.064 5a 7500 13" diameter plastic tape and reel smaj5.0ahe3/61 (1) 0.064 61 1800 7" diameter plastic tape and reel smaj5.0ahe3/5a (1) 0.064 5a 7500 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1 10 100 smaj5.0 - smaj7 8 smaj 8 5 - smaj1 88 p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 25 50 75 100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance 0 50 100 1 5 0 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 10 1 100 200 uni-directional bi-directional t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at stand-off v oltage v w m c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v )
smaj5.0 thru smaj188ca vishay general semiconductor document number: 88390 revision: 29-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 5 package outline dimensions in inches (millimeters) figure 5. typical transient thermal impedance 1 10 100 1000 0.001 0.01 0.1 1.0 10 100 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive forward surge current uni-directional only 10 1 5 50 100 10 50 100 200 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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